Solution-Processed, High-Speed, and High-Quantum-Efficiency Quantum Dot Infrared Photodetectors
نویسندگان
چکیده
منابع مشابه
Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors
In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...
متن کاملSolution-processed PbS quantum dot infrared photodetectors and photovoltaics.
In contrast to traditional semiconductors, conjugated polymers provide ease of processing, low cost, physical flexibility and large area coverage. These active optoelectronic materials produce and harvest light efficiently in the visible spectrum. The same functions are required in the infrared for telecommunications (1,300-1,600 nm), thermal imaging (1,500 nm and beyond), biological imaging (t...
متن کاملHigh-performance mid-infrared quantum dot infrared photodetectors
Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on intersublevel transitions in quantum dots (QDs). Three-dimensional quantum confinement offers the advantages of normal incidence operation, low dark currents and high-temperature operation. The performance characteristics of mid-infrared ...
متن کاملAssessment of quantum dot infrared photodetectors for high temperature operation
Investigation of the performance of quantum dot infrared photodetectors QDIPs in comparison to other types of infrared photodetectors operated near room temperature is presented. The model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active reg...
متن کاملHigh-performance graphene-quantum-dot photodetectors
Graphene quantum dots (GQDs) have received much attention due to their novel phenomena of charge transport and light absorption/emission. The optical transitions are known to be available up to ~6 eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Thus, the demonstration of photodetection gain with GQDs would be the basis for a plenty of applications not only as a single-f...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS Photonics
سال: 2016
ISSN: 2330-4022,2330-4022
DOI: 10.1021/acsphotonics.6b00211